BT236X 查看數據表（PDF） - NXP Semiconductors.
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BT236X Datasheet PDF : 13 Pages
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NXP Semiconductors
BT236X series F and G
6 A Four-quadrant triacs
7. Static characteristics
Table 6. Static characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
IGT
gate trigger
VD = 12 V;
current
IT = 0.1 A;
see Figure 8
T2+ G+
T2+ G
T2 G
T2 G+
IL
latching current VD = 12 V;
IGT = 0.1 A;
see Figure 10
T2+ G+
T2+ G
T2 G
T2 G+
IH
holding current VD = 12 V;
IGT = 0.1 A;
see Figure 11
VT
on-state voltage IT = 10 A;
see Figure 9
VGT
gate trigger
VD = 12 V;
voltage
IT = 0.1 A;
see Figure 7
VD = 400 V;
IT = 0.1 A;
Tj = 125 C
ID
off-state current VD = VDRM(max);
Tj = 125 C
BT236X-600
BT236X-800
Min Typ Max
BT236X-600F
Min Typ Max
BT236X-600G Unit
BT236X-800G
Min Typ Max
-
5
35
-
5
25
-
5
50 mA
-
8
35
-
8
25
-
8
50 mA
-
11 35
-
11 25
-
11 50 mA
-
30 70
-
30 70
-
30 100 mA
-
7
30
-
7
30
-
7
45 mA
-
16 45
-
16 45
-
16 60 mA
-
5
30
-
5
30
-
5
45 mA
-
7
45
7
45
-
7
60 mA
-
5
20
-
5
20
-
5
40 mA
-
1.3 1.65 -
1.3 1.65 -
1.3 1.65 V
-
0.7 1.5
-
0.7 1.5
-
0.7 1.5 V
0.25 0.4
- 0.25 0.4
- 0.25 0.4
-V
-
0.1 0.5
-
0.1 0.5
-
0.1 0.5 mA
BT236X_SER_F_G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 3 November 2011
© NXP B.V. 2011. All rights reserved.
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