BUK9520-100A 查看數據表（PDF） - Philips Electronics
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BUK9520-100A Datasheet PDF : 15 Pages
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Philips Semiconductors
BUK9520-100A; BUK9620-100A
TrenchMOS™ logic level FET
Table 5: Characteristics…continued
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Source-drain diode
VSD
source-drain (diode forward) IS = 25 A; VGS = 0 V;
−
voltage
Figure 15
trr
reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs
−
Qr
recovered charge
VGS = −10 V; VDS = 30 V
−
Typ
Max
Unit
0.85
1.2
V
76
−
ns
282
−
nC
250
ID
(A)
200
150
100
VGS (V) = 10
03nd85
4.6
5
4
3
16
RDSon
(mΩ)
15
14
03nd84
13
50
2.2
0
0
2
4
6
8
10
VDS (V)
12
2
4
6
8
10
VGS (V)
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
40
RDSon
(mΩ)
03nd86
VGS (V) = 3 3.2 3.4 3.6 3.8 5
30
20
10
0
Tj = 25 °C
50
100
150
200
250
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
3
a 2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20
03aa29
60 100 140 180
Tj (oC)
a = -------R----D----S--o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07915
Product specification
Rev. 01 — 7 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
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