BUK9212-55B 查看數據表（PDF） - Philips Electronics

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BUK9212-55B

TrenchMOS™ logic level FET

Philips Electronics 

BUK9212-55B

TrenchMOS™ logic level FET

Rev. 02 — 12 December 2003

M3D300

Product data

1. Product profile

1.1 Description

N-channel enhancement mode field-effect power transistor in a plastic package using

Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

1.2 Features

s Very low on-state resistance

s 185 °C rated

s Q101 compliant

s Logic level compatible.

1.3 Applications

s Automotive systems

s Motors, lamps and solenoids

s 12 V and 24 V loads

s General purpose power switching.

1.4 Quick reference data

s EDS(AL)S ≤ 173 mJ

s ID ≤ 75 A

s RDSon = 10.2 mΩ (typ)

s Ptot ≤ 167 W.

2. Pinning information

Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol

Pin Description

Simplified outline

1 gate (g)

2 drain (d)

[1]

mb

3 source (s)

mb mounting base;

connected to

drain (d)

2

1

3

Top view

MBK091

SOT428 (D-PAK)

[1] It is not possible to make connection to pin 2 of the SOT428 package.

Symbol

d

g

MBB076

s

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