BUK9212-55B 查看數據表（PDF） - Philips Electronics
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BUK9212-55B Datasheet PDF : 12 Pages
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Philips Semiconductors
BUK9212-55B
TrenchMOS™ logic level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
Version
BUK9212-55B
D-PAK
Plastic single-ended surface mounted package (Philips version of D-PAK); SOT428
3 leads (one lead cropped).
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 kΩ
Tmb = 25 °C; VGS = 5 V;
Figure 2 and 3
-
-
-
[1] -
[2] -
IDM
peak drain current
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
Figure 3
[1] -
-
Ptot
total power dissipation
Tmb = 25 °C; Figure 1
-
Tstg
storage temperature
−55
Tj
junction temperature
−55
Source-drain diode
IDR
reverse drain current (DC)
Tmb = 25 °C
[1] -
[2] -
IDRM
peak reverse drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs
-
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 75 A;
-
VDS ≤ 55 V; VGS = 5 V; RGS = 50 Ω;
starting Tj = 25 °C
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Max Unit
55
V
55
V
±15
V
83
A
75
A
59
A
335
A
167
W
+185 °C
+185 °C
83
A
75
A
335
A
173
mJ
9397 750 12235
Product data
Rev. 02 — 12 December 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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