BUK9212-55B 查看數據表（PDF） - Philips Electronics
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BUK9212-55B Datasheet PDF : 12 Pages
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Philips Semiconductors
BUK9212-55B
TrenchMOS™ logic level FET
250
ID
Label is VGS (V)
(A)
200
150
100
50
0
0
2
4
10
8
6
5
4.8
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
6
03no91
8
10
VDS (V)
18
RDSon
(mΩ)
14
10
6
3
03no90
7
11
15
VGS (V)
Tj = 25 °C; tp = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C; ID = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
25
03no92
2.4
3
4
5
10
RDSon
(mΩ)
3.2
3.8
a
3.4
3.6
20
1.6
03np00
15
0.8
10
5
0
50
100
Tj = 25 °C; tp = 300 µs
Label is VGS (V)
150
200
250
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
10
80
150
220
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 12235
Product data
Rev. 02 — 12 December 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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