BUL381 查看數據表（PDF） - SavantIC Semiconductor
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BUL381 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; L=25mH
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat-1 Collector-emitter saturation voltage IC=1A ;IB=0.2A
VCEsat-2 Collector-emitter saturation voltage IC=2A ;IB=0.4A
VCEsat-3 Collector-emitter saturation voltage IC=3A ;IB=0.8A
VBEsat-1 Base-emitter saturation voltage
IC=1A ;IB=0.2A
VBEsat-2 Base-emitter saturation voltage
ICES
Collector cut-off current
ICEO
Collector cut-off current
IC=2A ;IB=0.4A
VCE=800V VBE=0
Tj=125
VCE=400V; IB=0
hFE-1
DC current gain
IC=2A ; VCE=5V
hFE-2
DC current gain
IC=10mA ; VCE=5V
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
VCC=250V ,IC=2A
IB1=- IB2=0.4A
tp=30µs
Product Specification
BUL381
MIN TYP. MAX UNIT
400
V
9
0.5
V
0.7
V
1.1
V
1.1
V
1.2
V
100
500
µA
250
µA
8
10
1
µs
1.4
2.2
µs
0.8
µs
2
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