BUK9606-75B 查看數據表（PDF） - NXP Semiconductors.
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BUK9606-75B Datasheet PDF : 13 Pages
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BUK9606-75B
N-channel TrenchMOS logic level FET
103
ID
(A)
102
10
1
10-1
10-1
Limit RDSon = VDS / ID
1
DC
10
tp =10 μ s
100 μ s
03ng87
1 ms
10 ms
100 ms
102
103
V DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 4
mounted on a printed circuit
board; minimum footprint
Min Typ Max Unit
-
-
0.5 K/W
-
50
-
K/W
1
03ng88
Zth(j-mb)
(K/W)
10−1
10−2
δ = 0.5
0.2
0.1
0.05
0.02
P
tp
δ=
T
single shot
10−3
10−6
10−5
10−4
10−3
10−2
tp
t
T
10−1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9606-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 20 July 2011
© Nexperia B.V. 2017. All rights reserved
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