BUL381 查看數據表（PDF） - Inchange Semiconductor
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BUL381 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BUL381
DESCRIPTION
·
·With TO-220C package
·High voltage capability
·Very high switching speed
APPLICATIONS
·Designed for use in lighting
applications and low cost
switch-mode power supplies.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
导体 Absolute maximum ratings (Ta=25℃)
固I电NC半HANGE SEMICONDUCTOR SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
CONDITIONS
Open emitter
Open base
Open collector
VALUE
800
400
9
5
UNIT
V
V
V
A
ICM
Collector current-Peak (tp<5 ms)
8
A
IB
Base current
2
A
IBM
Base current-Peak (tp<5 ms)
4
A
PT
Total power dissipation
TC=25℃
70
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance from junction to case
VALUE
1.78
UNIT
℃/W
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