BUZ346 查看數據表（PDF） - Siemens AG
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BUZ346 Datasheet PDF : 9 Pages
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BUZ 346
Not for new design
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 58 A, VDD = 25 V
RGS = 25 Ω, L = 21.4 µH
75
mJ
65
EAS 60
55
50
45
40
35
30
25
20
15
10
5
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 87 A
16
V
VGS
12
10
0,2 VDS max
8
0,8 VDS max
6
4
2
0
0 20 40 60 80 100 120 nC 160
QGate
60
V
58
V(BR)DSS 57
56
55
54
53
52
51
50
49
48
47
46
45
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
07/96
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