BUZ73ALH 查看數據表（PDF） - Infineon Technologies
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BUZ73ALH Datasheet PDF : 10 Pages
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BUZ 73AL H
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 3.5 A, VGS = 5 V
1.9
Ω
1.6
R
DS (on)
1.4
1.2
1.0
98%
0.8
typ
0.6
0.4
0.2
0.0
-60
-20
20
60
100 ˚C 160
Tj
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
4.6
V
4.0
VGS(th) 3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
-60
-20
98%
typ
2%
20
60
100 ˚C 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 4
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 2
pF
C
10 3
A
I
F
10 1
Ciss
10 2
Coss
Crss
10 1
0
5 10 15 20 25 30 V 40
VDS
10 0
Tj = 25 ˚C typ
Tj = 150 ˚C typ
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
10 -1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
Rev. 2.4
Page 7
2009-11-10
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