BYD37 查看數據表（PDF） - Philips Electronics
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BYD37 Datasheet PDF : 12 Pages
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Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Product specification
BYD37 series
SYMBOL
PARAMETER
ERSM
non-repetitive peak reverse
avalanche energy
BYD37D to J
BYD37K and M
Tstg
storage temperature
Tj
junction temperature
CONDITIONS
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
see Fig.7
MIN. MAX. UNIT
−
10 mJ
−
7 mJ
−65
+175 °C
−65
+175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
V(BR)R
IR
reverse avalanche breakdown
voltage
BYD37D
BYD37G
BYD37J
BYD37K
BYD37M
reverse current
trr
reverse recovery time
BYD37D to J
BYD37K and M
Cd
diode capacitance
-d-d--I--tR--
maximum slope of reverse recovery
current
BYD37D to J
BYD37K and M
CONDITIONS
IF = 1 A; Tj = Tj max;
see Fig.8
IF = 1 A;
see Fig.8
IR = 0.1 mA
VR = VRRMmax; see Fig.9
VR = VRRMmax;
Tj = 165 °C; see Fig.9
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25A;
see Fig.12
f = 1 MHz; VR = 0;
see Fig.10
when switched from
IF = 1 A to VR ≥ 30 V and
dIF/dt = −1 A/µs;
see Fig.13
MIN.
−
−
300
500
700
900
1 100
−
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
−
20
−
−
MAX. UNIT
1.1 V
1.3 V
−V
−V
−V
−V
−V
1 µA
100 µA
250 ns
300 ns
− pF
6 A/µs
5 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
30
K/W
150
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the “General Part of associated Handbook”.
1999 Nov 16
3
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