BYQ28E-150 查看數據表（PDF） - Philips Electronics
零件编号
产品描述 (功能)
生产厂家
BYQ28E-150 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYQ28E, BYQ28EB, BYQ28ED series
ESD LIMITING VALUE
SYMBOL PARAMETER
VC
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
8
UNIT
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
SOT78 package, in free air
SOT404 and SOT428 packages, pcb
mounted, minimum footprint, FR4 board
MIN.
-
-
-
-
TYP.
-
-
60
50
MAX. UNIT
4.5 K/W
3 K/W
- K/W
- K/W
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF
Forward voltage
IF = 5 A; Tj = 150˚C
IF = 5 A
IF = 10 A
IR
Reverse current
VR = VRWM
VR = VRWM; Tj = 100˚C
Qrr
Reverse recovered charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
trr1
Reverse recovery time
IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs
trr2
Reverse recovery time
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
Irrm
Peak reverse recovery
IF = 5 A; VR ≥ 30 V; -dIF/dt = 50 A/µs
current
Vfr
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
TYP.
0.8
0.95
1.1
2
0.1
4
15
10
0.5
MAX. UNIT
0.895 V
1.1 V
1.25 V
10 µA
0.2 mA
9 nC
25 ns
20 ns
0.7 A
-
1
-
V
October 1998
2
Rev 1.300
Share Link: 