BYV29X-600 查看數據表（PDF） - NXP Semiconductors.
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BYV29X-600 Datasheet PDF : 10 Pages
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NXP Semiconductors
BYV29X-600
Rectifier diode ultrafast
5. Thermal characteristics
Table 4. Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Rth(j-h) thermal resistance from junction to heatsink with heatsink compound;
-
-
5.5 K/W
see Figure 1
without heatsink compound -
-
5.9 K/W
Rth(j-a) thermal resistance from junction to ambient in free air
-
55
-
K/W
10
Zth(j-h)
(K/W)
1
001aaf257
10−1
P
tp
δ=
T
10−2
10−3
10−6
10−5 10−4
10−3 10−2
tp
T
10−1
t
1 10
tp (s)
Fig 1. Transient thermal impedance from junction to heatsink as a function of pulse width
6. Isolation characteristics
Table 5. Isolation limiting values and characteristics
Th = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Visol(RMS) RMS isolation voltage
from all terminals to external heatsink;
f = 50 Hz to 60 Hz; sinusoidal waveform;
relative humidity ≤ 65 %; clean and dust free
Cisol
isolation capacitance from cathode to external heatsink; f = 1 MHz
Min Typ Max Unit
-
-
2500 V
-
10
-
pF
BYV29X-600_2
Product data sheet
Rev. 02 — 4 September 2007
© NXP B.V. 2007. All rights reserved.
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