BYV29X-600 查看數據表（PDF） - NXP Semiconductors.

零件编号

产品描述 (功能)

生产厂家

BYV29X-600

Rectifier diodes ultrafast

NXP Semiconductors. 

NXP Semiconductors

7. Characteristics

Table 6. Characteristics

Tj = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Static characteristics

VF

forward voltage

IR

reverse current

Dynamic characteristics

IF = 8 A; Tj = 150 °C; see Figure 2

IF = 8 A; see Figure 2

IF = 20 A; see Figure 2

VR = 600 V

VR = 600 V; Tj = 100 °C

Qr

recovered charge

IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs;

see Figure 3

trr

reverse recovery time IF = 1 A to VR ≥ 30 V;

dIF/dt = 100 A/µs; see Figure 3

IRM

peak reverse recovery IF = 10 A to VR ≥ 30 V;

current

dIF/dt = 50 A/µs; Tj = 100 °C;

see Figure 3

VFR

forward recovery

IF = 10 A; dIF/dt = 10 A/µs;

voltage

see Figure 4

BYV29X-600

Rectifier diode ultrafast

Min

Typ

Max Unit

-

0.97 1.11 V

-

1.12 1.26 V

-

1.31 1.45 V

-

2

50

µA

-

0.1

0.35 mA

-

40

70

nC

-

50

60

ns

-

3

5.5

A

-

3.2

-

V

BYV29X-600_2

Product data sheet

Rev. 02 — 4 September 2007

© NXP B.V. 2007. All rights reserved.

4 of 10

Share Link: