BYW51-200 查看數據表（PDF） - STMicroelectronics
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BYW51-200 Datasheet PDF : 9 Pages
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Fig. 1: Average forward power dissipation versus
average forward current (per diode).
BYW51/F/G/FP/R-200
Fig. 2: Peak current versus form factor (per diode).
PF(av)(W)
14
δ = 0.1
12
δ = 0.05
δ = 0.2
10
8
6
4
2
IF(av) (A)
0
012345678
δ = 0.5
δ=1
T
δ=tp/T
tp
9 10 11 12 13
IM(A)
120
100
80
P=10W
T
δ=tp/T
tp
60
P=15W
40
P=5W
20
δ
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 3-1: Average forward current versus ambient
temperature (δ = 0.5, D2PAK, TO-220AB).
Fig. 3-2: Average forward current versus
ambient temperature (δ = 0.5, ISOWATT220AB,
TO-220FPAB).
IF(av)(A)
12
10
8
6
4
T
2
δ=tp/T
tp
0
0
25
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
50
75
100
125
150
IF(av)(A)
12
10
8
Rth(j-a)=Rth(j-c)
TO-220FP
ISOWATT220AB
6
Rth(j-a)=15°C/W
4
T
2
δ=tp/T
tp
Tamb(°C)
0
0
25
50
75
100 125
150
Fig. 4-1: Non repetitive surge peak forward current
versus overload duration (D2PAK, TO-220AB)
Fig. 4-2: Non repetitive surge peak forward current
versus overload duration (ISOWATT220AB).
IM(A)
100
90
80
70
60
50
40
30
20 IM
10
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=25°C
Tc=75°C
Tc=100°C
1E+0
IM(A)
80
70
60
50
40
30
20 IM
10
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=25°C
Tc=75°C
Tc=100°C
1E+0
3/9
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