TGF4350-EPU 查看數據表（PDF） - TriQuint Semiconductor

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TGF4350-EPU

300um Discrete pHEMT

TriQuint Semiconductor 

Advance Product Information

TGF4350-EPU

FET Elements

Lg = 0.040 nH

Rg = 0.525 Ohms

Rgs = 14500 Ohms

Ri = 4.924 Ohms

Cgs = 0.364 pF

Cdg = 0.042 pF

G

Rdg = 146000 Ohms

Rs = 0.300 Ohms

Ls = 0.041 nH

Rds = 253.858 Ohms

Cds = 0.080 pF

Rd = 0.833 Ohms

Ld = 0.028 nH

VCCS Parameters

M = 0.091 S

A=0

R1 = 1E19 Ohms

R2 = 1E19 Ohms

F=0

T = 4.000 pS

Lg Rg

Rgs

Cdg

Rdg

VCCS

Ri

R1 R2

Cgs

Rs

Ls

Rd Ld

Cds

Rds

TGA4350EPU pHEMT Model (Vds = 3.0 V and 15mA at T = 25°C)

Device is mounted on a 20

mil high ledge. Source

inductance includes that of

source bondwires and ledge

TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com

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