DIM200PHM33-F000(2004) 查看數據表（PDF） - Dynex Semiconductor
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DIM200PHM33-F000 Datasheet PDF : 9 Pages
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DIM200PHM33-F000
TYPICAL CHARACTERISTICS
400
Common emitter
Tcase = 25˚C
Vce is measured at power
busbars and not the
auxiliary terminals
300
400
Common emitter
Tcase = 125˚C
Vce is measured at power
busbars and not the
auxiliary terminals
300
200
200
100
VGE = 10V
VGE = 12V
VGE = 15V
0
VGE = 20V
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
400
Conditions:
Tc = 125˚C,
Rg(on) = 7.5 Ohms,
Rg(off) = 16.5 Ohms
Cge = 56nF,
300
Vcc = 1800V,
Vge = ±15V
200
100
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
1400
Conditions:
Tc = 125˚C,
IC = 200A,
1200 Vcc = 1800V,
Cge = 56nF,
Vge = ±15V
1000
800
Eon (mJ)
Eoff (mJ)
Erec (mJ)
600
100
Eon (mJ)
Eoff (mJ)
Erec (mJ)
0
0 20 40 60 80 100 120 140 160 180 200
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
400
200
0
0
8
16
24
32
40
48
56
Gate resistance, Rg - (ohms)
Fig. 6 Typical switching energy vs gate resistance
6/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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