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DS75S-TR 查看數據表(PDF) - Dallas Semiconductor -> Maxim Integrated

零件编号
产品描述 (功能)
生产厂家
DS75S-TR
Dallas
Dallas Semiconductor -> Maxim Integrated 
DS75S-TR Datasheet PDF : 13 Pages
First Prev 11 12 13
DS75
ABSOLUTE MAXIMUM RATINGS*
Voltage on VDD, Relative to Ground
–0.3V to +7.0V
Voltage on any other pin, Relative to Ground
–0.3V to (V DD + 0.3V)
Operating Temperature
–55°C to +125°C
Storage Temperature
–55°C to +125°C
Soldering Temperature
260°C for 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
The Dallas Semiconductor DS75 is built to the highest quality standards and manufactured for long term
reliability. All Dallas Semiconductor devices are made using the same quality materials and
manufacturing methods. However, the DS75 is not exposed to environmental stresses, such as burn–in,
that some industrial applications require. For specific reliability information on this product, please
contact the factory in Dallas at (972) 371–4448.
RECOMMENDED DC OPERATING CONDITIONS
(-55°C to +125°C; 2.7V VDD 5.5V)
PARAMETER
SYMBOL CONDITION MIN TYP
Supply Voltage
VDD
2.7
MAX
5.5
UNITS NOTES
V
DC ELECTRICAL CHARACTERISTICS (-55°C to +125°C; 2.7V VDD 5.5V)
PARAMETER
SYMBOL CONDITION MIN TYP MAX UNITS NOTES
Input Logic High
VIH
0.7VDD
VDD+0.5
V
1
Input Logic Low
VIL
-0.5
0.3VDD
V
1
SDA Output Logic Low
Voltage
VOL1
3 mA sink
current
0
0.4
V
1
VOL2
6 mA sink
current
0
0.6
O.S. Saturation Voltage
VOL
4 mA sink
current
0.8
V
1, 9
Input current each I/O pin
0.4 < VI/O<
0.9 VDD
-10
+10
µA
2
I/O Capacitance
CI/O
10
pF
Standby Current
IDD1
1
µA
3, 4
Active Current
Active Temp.
IDD
Conversions
Communica-
tion only
1000
µA
3, 4
100
11 of 13

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