DTC114TE(2009) 查看數據表（PDF） - ROHM Semiconductor
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DTC114TE Datasheet PDF : 3 Pages
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DTC114TM / DTC114TE / DTC114TUA / DTC114TKA
z Packaging specifications
Package
Package type
Code
VMT3
Taping
T2L
Part No.
Basic ordering
unit (pieces)
8000
DTC114TM
DTC114TE
−
DTC114TUA
−
DTC114TKA
−
EMT3
Taping
TL
3000
−
−
−
UMT3
Taping
T106
3000
−
−
−
SMT3
Taping
T146
3000
−
−
−
z Absolute maximum ratings (Ta=25qC)
Parameter
Limits
Symbol
Unit
DTA114TM DTA114TE DTA114TUA DTA114TKA
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
IC
PC
Tj
Tstg
5
V
100
mA
150
200
mW
150
°C
−55 to +150
°C
z Electrical characteristics (Ta=25qC)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗ Characteristics of built-in transistor
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT ∗
Min.
50
50
5
−
−
−
100
7
−
Typ.
−
−
−
−
−
−
250
10
250
Max.
−
−
−
0.5
0.5
0.3
600
13
−
Unit
V
V
V
μA
μA
V
−
kΩ
MHz
Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=50V
VEB=4V
IC/IB=10mA/1mA
VCE=5V, IC=1mA
−
VCE=10V, IE=−5mA, f=100MHz
z Electrical characteristic curves
1k
VCE=5V
500
200
100
Ta=100°C
25°C
50
−40°C
20
10
5
2
1
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector
current
1
lC/lB=10
500m
200m
100m
Ta=100°C
25°C
50m
−40°C
20m
10m
5m
2m
1m
100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Data Sheet
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٤c 2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.C
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