EM639165TS 查看數據表（PDF） - Etron Technology

零件编号

产品描述 (功能)

生产厂家

EM639165TS

8Mega x 16 Synchronous DRAM (SDRAM)

Etron Technology 

EtronTech

EM639165

WE#

LDQM,

UDQM

DQ0-DQ15

NC/RFU

VDDQ

VSSQ

VDD

VSS

Input

Input

Input /

Output

-

Supply

Supply

Supply

Supply

Write Enable: The WE# signal defines the operation commands in conjunction

with the RAS# and CAS# signals and is latched at the positive edges of CLK.

The WE# input is used to select the BankActivate or Precharge command and

Read or Write command.

Data Input/Output Mask: Controls output buffers in read mode and masks

Input data in write mode.

Data I/O: The DQ0-15 input and output data are synchronized with the positive

edges of CLK. The I/Os are maskable during Reads and Writes.

No Connect: These pins should be left unconnected.

DQ Power: Provide isolated power to DQs for improved noise immunity.

( 3.3V± 0.3V )

DQ Ground: Provide isolated ground to DQs for improved noise immunity.

(0V)

Power Supply: +3.3V ± 0.3V

Ground

4

Rev 1.6 Feb. 2007

Share Link: