FDP3651U 查看數據表（PDF） - Fairchild Semiconductor

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FDP3651U

N-Channel PowerTrench® MOSFET 100V, 80A, 15mΩ

Fairchild Semiconductor 

July 2006

FDP3651U

N-Channel PowerTrench® MOSFET

100V, 80A, 15mΩ

Features

• rDS(on)=13 mΩ(Typ.), VGS = 10V, ID = 40A

• Qg(TOT)=49 nc(Typ.), VGS = 10 V

• Low Miller Charge

Applications

• DC/DC converters and Off-Line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• Low Qrr Body Diode

• UIS Capability (Single Pulse/Repetitive Pulse)

• High Voltage Synchronous Rectifier

DRAIN

(FLANGE)

TO-220AB

FDP SERIES

SOURCE

DRAIN

GATE

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol

VDSS

VGSS

ID

PD

EAS

TJ, TSTG

TL

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

Power Dissipation

Single Pulsed Avalanche Energy

Operating and Storage Temperature

Maximum lead temperature soldering purposes,

1/8” from case for 5 seconds

(Note 1)

(Note 2)

Ratings

100

±20

80

220

255

266

-55 to 175

300

Units

V

V

A

W

mJ

°C

°C

Thermal Characteristics

RθJA

RθJC

Thermal Resistance , Junction to Ambient

Thermal Resistance , Junction to Case

Package Marking and Ordering Information

Device Marking

FDP3651U

Device

FDP3651U

Reel Size

Tube

62

°C/W

0.59

°C/W

Tape Width

N/A

Quantity

50 units

©2006 Fairchild Semiconductor Corporation

1

FDP3651U Rev. A

www.fairchildsemi.com

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