FDZ291P 查看數據表（PDF） - Fairchild Semiconductor
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FDZ291P Datasheet PDF : 6 Pages
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Electrical CharacteristicsTA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage.
VGS = 0 V,
ID = –250 µA
ID = –250 µA, Referenced to 25°C
VDS = –16 V,
VGS = ±8 V,
VGS = 0 V
VDS = 0 V
–20
–12
V
mV/°C
–1
µA
±100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS,
ID = –250 µA
ID = –250 µA, Referenced to 25°C
–0.4 –0.7 –1.0 V
2
mV/°C
VGS = –4.5 V, ID = –4.6 A
VGS = –2.5 V, ID = –3.6 A
VGS = –1.5 V, ID = –1.0 A
VGS = –4.5 V, ID = –4.6 A, TJ=125°C
31 40 mΩ
43 60
85 160
42 55
VGS = –4.5 V, VDS = –5 V
–10
A
VDS = –5 V,
ID = –4.6 A
16
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
1010
pF
160
pF
80
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 Ω
VDS = –10V,
VGS = –4.5 V
ID = –4.6 A,
11 19
ns
9
18
ns
36 58
ns
16 29
ns
9
13
nC
1.6
nC
1.9
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0V, IS = –1.4 A (Note 2)
trr
Diode Reverse Recovery Time
IF = –4.6 A, dIF/dt = 100A/µs
Qrr
Diode Reverse Recovery Charge
–1.4 A
–0.7 –1.2 V
17
ns
5
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design.
a) 72°C/W when
mounted on a 1in2 pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b) 157°C/W when mounted
on a minimum pad of 2 oz
copper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ291P Rev. C1 (W)
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