FES8AT 查看數據表（PDF） - Vishay Semiconductors
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FES8AT Datasheet PDF : 5 Pages
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FES(F,B)8AT thru FES(F,B)8JT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
FES
8AT
FES FES
8BT 8CT
FES
8DT
FES
8FT
FES
8GT
FES FES
8HT 8JT
Maximum instantaneous
forward voltage (1)
8.0 A
VF
0.95
1.3
1.5
Maximum DC reverse
current at rated DC
blocking voltage
TC = 25 °C
TC = 100 °C
IR
10
500
Maximum reverse
recovery time
Typical junction
capacitance
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
4.0 V, 1 MHz
CJ
35
85
50
50
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
UNIT
V
µA
ns
pF
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
FES
Typical thermal resistance from junction to case
RθJC
2.2
FESF
5.0
FESB
2.2
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AC
FES8JT-E3/45
1.80
ITO-220AC
FESF8JT-E3/45
1.85
TO-263AB
FESB8JT-E3/45
1.33
TO-263AB
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
FESB8JT-E3/81
FES8JTHE3/45 (1)
FESF8JTHE3/45 (1)
FESB8JTHE3/45 (1)
FESB8JTHE3/81 (1)
1.33
1.80
1.85
1.33
1.33
Note:
(1) Automotive grade AEC Q101 qualified
PACKAGE CODE
45
45
45
81
45
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Tube
Tube
Tape and reel
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 88600
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 07-Nov-07
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