F04H60S 查看數據表（PDF） - Fairchild Semiconductor
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F04H60S Datasheet PDF : 5 Pages
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FFD04H60S
Hyperfast II Diode
Features
• Hyperfast Recovery, trr = 60 ns (@ IF = 4 A)
• Max Forward Voltage, VF = 2.1 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rrated
• RoHS Compliant
Applications
• General Purpose
• SMPS, Power Switching Circuits
• Free-Wheeling Diode for Motor Application
November 2013
Description
The FFD04H60S is a hyperfast II diode and silicon nitride passiv-
ated ion-implanted epitaxial planar construction. This device is
intended for use as freewheeling/clamping diodes in a variety of
switching power supplies and other power switching applica-
tions. Its low stored charge and hyperfast soft recovery minimize
ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
33
11
22
TDOP-A2K52
((DTO-P2A52K))
1,3 Cathode 2. Anode
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 130oC
TJ, TSTG
Operating and Storage Temperature Range
Thermal Characteristics
Symbol
RJC
Parameter
Maximum Thermal Resistance, Junction to Case
Package Marking and Ordering Information
Part Number
FFD04H60S
Top Mark
F04H60S
Package Packing Method
TO-252(D-PAK)
Reel
Reel Size
13” Dia
Ratings
600
600
600
4
40
-65 to +150
Max.
4.0
Tape Width
N/A
Unit
V
V
V
A
A
oC
Unit
oC/W
Quantity
2500
©2008 Fairchild Semiconductor Corporation
1
FFD04H60S Rev. C1
www.fairchildsemi.com
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