FQD12N20LTF085 查看數據表（PDF） - Fairchild Semiconductor
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FQD12N20LTF085 Datasheet PDF : 9 Pages
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
102
101
100
10-1
100
Operation in This Area
is Limited by R DS(on)
100 µs 10 µs
1 ms
10 ms
DC
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 5.8 A
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs. Temperature
9.0
7.5
6.0
4.5
3.0
1.5
0.0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D =0.5
1 0 -1
0 .2
0 .1
0 .05
0 .02
0 .01
s in g le p u ls e
※ N ote s :
1. Z θ JC(t) = 2.27 ℃ /W M ax.
2. D u ty F actor, D = t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
FQD12N20LTM_F085 Rev. B
4
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