FQP30N06(2003) 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
FQP30N06 Datasheet PDF : 8 Pages
| |||
Typical Characteristics
102 Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
101
100
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
100
80
60
V = 10V
GS
VGS = 20V
40
20
※ Note : TJ = 25℃
0
0
20
40
60
80
100
120
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2000
1500
1000
C
oss
C
iss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
500
C
rss
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
102
101
175℃
25℃
-55℃
※ Notes :
1.
2.
V25DS0μ=s25PVulse
Test
100
2
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
0.2
175℃
25℃
※ Notes :
1.
2.
2V5GS0μ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 30V
V = 48V
DS
8
6
4
2
※ Note : ID = 30A
0
0
4
8
12
16
20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
Rev. A2, March 2003
Share Link: 