FQP3N80C 查看數據表（PDF） - Fairchild Semiconductor
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FQP3N80C Datasheet PDF : 10 Pages
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Typical Characteristics
101
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
100 Bottom: 5.5 V
10-1
10-2
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
10
V = 10V
GS
8
V = 20V
GS
6
4
※ Note : T = 25℃
J
2
0
2
4
6
8
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
800
600
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
iss
C
400
oss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
200
C
rss
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
101
150oC
100
25oC
-55oC
10-1
4
※ Notes :
1.
2.
V25DS0μ=s50PVulse
Test
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1.
2.
V25GS0μ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 160V
DS
10
V = 400V
DS
V = 640V
8
DS
6
4
2
※ Note : ID = 3A
0
0
3
6
9
12
15
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, April 2003
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