FZT851 查看數據表（PDF） - Diodes Incorporated.
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FZT851 Datasheet PDF : 7 Pages
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A Product Line of
Diodes Incorporated
FZT851
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Collector-Base Breakdown Voltage
BVCBO
150
Collector-Emitter Breakdown Voltage
BVCER
150
Collector-Emitter Breakdown Voltage (Note 10)
BVCEO
60
Emitter-Base Breakdown Voltage
BVEBO
7
Collector Cut-off Current
ICBO
−
−
Collector Cut-off Current
ICER
−
−
Emitter Cut-off Current
IEBO
−
100
DC Current Gain (Note 10)
100
hFE
75
25
−
−
Collector-Emitter Saturation Voltage (Note 10)
VCE(sat)
−
−
Base-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-On Voltage (Note 10)
VBE(sat)
−
VBE(on)
−
Current Gain-Bandwidth Product (Note 10)
fT
−
Output Capacitance (Note 10)
Switching Times
Cobo
−
ton
−
toff
−
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
Typ
220
220
85
8.1
<1
−
<1
−
<1
200
200
120
50
−
−
−
−
−
−
130
45
45
1100
Max
−
−
−
−
50
1
50
1
10
−
300
−
−
50
100
170
375
1200
1150
−
−
−
−
Unit
V
V
V
V
nA
µA
nA
µA
nA
−
mV
mV
mV
MHz
pF
ns
Test Condition
IC = 100µA
IC = 1µA, RB ≤ 1kΩ
IC = 10mA
IE = 100µA
VCB = 120V
VCB = 120V, TA = +100°C
VCB = 120V, RB ≤ 1kΩ
VCB = 120V, TA = +100°C
VEB = 6V
IC = 10mA, VCE = 1V
IC = 2A, VCE = 1V
IC = 5A, VCE = 1V
IC = 10A, VCE = 1V
IC = 100mA, IB = 5mA
IC = 1A, IB = 50mA
IC = 2A, IB = 50mA
IC = 6A, IB = 300mA
IC = 6A, IB = 300mA
IC = 6A, VCE = 1V
IC = 100mA, VCE = 10V,
f = 50MHz
VCB = 10V, f = 1MHz
IC = 1A, VCC = 10V,
IB1 = -IB2 = 100mA
FZT851
Document Number DS33174 Rev. 3 - 2
4 of 7
www.diodes.com
January 2013
© Diodes Incorporated
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