GS78132AB-15I 查看數據表（PDF） - Giga Semiconductor

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GS78132AB-15I

256K x 32 8Mb Asynchronous SRAM

Giga Semiconductor 

GS78132AB

BGA

Commercial Temp

Industrial Temp

256K x 32

8Mb Asynchronous SRAM

8, 10, 12 ns

3.3 V VDD

Features

• Fast access time: 8, 10, 12 ns

• CMOS low power operation: 260/210/180 mA at minimum

cycle time

• Single 3.3 V ± 0.3 V power supply

• All inputs and outputs are TTL-compatible

• Byte control

• Fully static operation

• Industrial Temperature Option: –40° to 85°C

• 14 mm x 22 mm, 119-bump, 1.27 mm Pitch Ball Grid Array

package

• RoHS-compliant package available

Description

The GS78132A is a high speed CMOS Static RAM organized

as 262,144-words by 32-bits. Static design eliminates the need

for external clocks or timing strobes. The GS78132A operates

on a single 3.3 V power supply, and all inputs and outputs are

TTL-compatible. The GS78132A is available in a

14 mm x 22 mm BGA package.

Pin Descriptions

Symbol

Description

A0 to A17

Address input

CE

Chip enable input

DQA1 TO DQA8

Byte A Data input/output

DQB1 TO DQB8

Byte B Data input/output

DQC1 TO DQC8

Byte C Data input/output

DQD1 TO DQD8

Byte D Data input/output

BA

Byte A Byte enable input

BB

Byte B Byte enable input

BC

Byte C Byte enable input

BD

Byte D Byte enable input

WE

Write enable input

OE

Output enable input

VDD

+3.3 V power supply

VSS

Ground

NC

No connect

Block Diagram

A0

Row

Decoder

Address

Input

Buffer

A17

CE

WE

OE

Control

Bx ____

Memory Array

Column

Decoder

I/O Buffer

DQ1

DQ32

Rev: 1.04 5/2006

1/12

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

© 2003, GSI Technology

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