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零件编号
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GT10J321 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
GT10J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
GT10J321 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
I
C
– V
CE
20
Common emitter
Tc
=
25°C
16
15
20
10
12
9
8
4
VGE
=
8 V
0
0
1
2
3
4
5
Collector-emitter voltage V
CE
(V)
GT10J321
V
CE
– V
GE
20
Common emitter
Tc
= −
40°C
16
20
12
10
8
IC
=
5 A
4
0
0
4
8
12
16
20
Gate-emitter voltage V
GE
(V)
V
CE
– V
GE
20
Common emitter
Tc
=
25°C
16
12
20
10
8
IC
=
5 A
4
0
0
4
8
12
16
20
Gate-emitter voltage V
GE
(V)
V
CE
– V
GE
20
Common emitter
Tc
=
125°C
16
12
20
10
8
IC
=
5 A
4
0
0
4
8
12
16
20
Gate-emitter voltage V
GE
(V)
I
C
– V
GE
20
Common emitter
VCE
=
5 V
16
12
8
Tc
=
125°C
4
25
−
40
0
0
4
8
12
16
20
Gate-emitter voltage V
GE
(V)
V
CE (sat)
– Tc
4
Common emitter
VGE
=
15 V
3
2
1
20
15
10
5
IC
=
2 A
0
−
60
−
20
20
60
100
140
Case temperature Tc (°C)
3
2006-11-01
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