H11G1M 查看數據表（PDF） - Fairchild Semiconductor
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H11G1M Datasheet PDF : 8 Pages
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
TOTAL DEVICE
TSTG
TOPR
TSOL
PD
Storage Temperature
Operating Temperature
Lead Solder Temperature (Wave Solder)
Total Device Power Dissipation @ TA = 25°C
Derate Above 25°C
EMITTER
IF
Forward Input Current
VR
Reverse Input Voltage
IF(pk)
Forward Current – Peak (1µs pulse, 300pps)
PD
LED Power Dissipation @ TA = 25°C
Derate Above 25°C
DETECTOR
VCEO
Collector-Emitter Voltage
H11G1M
H11G2M
H11G3M
PD
LED Power Dissipation @ TA = 25°C
Derate Above 25°C
Value
-55 to +150
-40 to +100
260 for 10 sec
260
3.5
60
6.0
3.0
100
1.8
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
100
V
80
55
200
mW
2.67
mW/°C
©2007 Fairchild Semiconductor Corporation
H11GXM Rev. 1.0.0
2
www.fairchildsemi.com
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