Die Characteristics
DIE DIMENSIONS:
106 mils x 73 mils x 19 mils
2700µm x 1850µm x 483µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
PASSIVATION
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
Metallization Mask Layout
+IN
HA-2542
SUBSTRATE POTENTIAL (POWERED UP):
V-
TRANSISTOR COUNT:
43
PROCESS:
Bipolar Dielectric Isolation
HA-2542
-IN
BAL
BAL
V-
OUTPUT
V+
COMP
11