HAL1000UT-E 查看數據表（PDF） - Micronas

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HAL1000UT-E

Programmable Hall Switch

Micronas 

ADVANCE INFORMATION

HAL 1000

2. Functional Description

2.1. General Function

The HAL 1000 is a monolithic integrated circuit which

provides a digital output signal. The sensor is based

on the HAL 80x design. All blocks before the compara-

tor are identical to the HAL 805 and the signal process-

ing is very similar.

The Hall plate is sensitive to magnetic north and south

polarity. The external magnetic field component per-

pendicular to the branded side of the package gener-

ates a Hall voltage. This voltage is converted to a digi-

tal value and processed in the Digital Signal

Processing Unit (DSP) according to the settings of the

EEPROM registers. The function and the parameters

for the DSP are explained in Section 2.2. on page 6.

The sensor characteristics depend on the LOCK regis-

ter:

– As long as the LOCK register is not set, the switch-

ing points and other characteristics can be adjusted

by programming the EEPROM registers. The IC is

addressed by modulating the supply voltage (see

Fig. 2–1). Between 4.5 V and 5.5 V, the sensor out-

put provides the switching signal according to the

magnetic field. If the voltage rises above 6 V, the

sensor detects a command, reads or writes the

memory, and answers with a digital telegram on the

output pin. At supply voltages of 6 V or more, the

sensor does not provide the switching function.

– Setting the LOCK register disables the programming

of the EEPROM memory permanently. This register

cannot be reset. The sensor operates from 4.5 V up

to 5.5 V in specification and function is typically

given up to 8.5 V.

Several sensors in parallel to the same supply and

ground line can be programmed individually. The

selection of each sensor is done via a 5 V pulse on its

output pin.

Internal temperature compensation circuitry and the

choppered offset compensation enables operation

over the full temperature range with minimal changes

of the switching points. The circuitry also rejects offset

shifts due to mechanical stress from the package. The

non-volatile memory consists of redundant EEPROM

cells. In addition, the HAL 1000 is equipped with

devices for overvoltage and reverse-voltage protection

at all pins.

HAL

1000

8

VDD

7

6

5

VDD

OUT

GND

protocol digital

output

Fig. 2–1: Programming with VDD modulation

VDD

Internally

stabilized

Supply and

Protection

Devices

Temperature

Dependent

Bias

Oscillator

Protection

Devices

Switched

Hall Plate

A/D

Converter

Digital

Signal

Processing

Digital

Output

100 Ω

OUT

GND

Supply

Level

Detection

EEPROM Memory

Lock Control

Fig. 2–2: HAL 1000 block diagram

Micronas

5

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