HITK0204MP 查看數據表（PDF） - Renesas Electronics

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HITK0204MP

20V, 2.3A, 130mΩmax. Silicon N Channel MOS FET Power Switching

Renesas Electronics 

HITK0204MP

Electrical Characteristics

Item

Drain to source breakdown voltage

Gate to source breakdown voltage

Gate to source leak current

Drain to source leak current

Gate to source cutoff voltage

Drain to source on state resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn - on delay time

Rise time

Turn - off delay time

Fall time

Total gate charge

Gate to source charge

Gate to drain charge

Body - drain diode forward voltage

Notes: 3. Pulse test

Symbol

V(BR)DSS

V(BR)GSS

IGSS

IDSS

VGS(off)

RDS(on)

RDS(on)

|yfs|

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VDF

Min

20

12

—

—

0.4

—

—

1.5

—

—

—

—

—

—

—

—

—

—

—

Typ

—

—

—

—

—

100

146

3.0

127

33

14

11

28

24

7

1.5

0.3

0.4

0.85

Max

—

—

10

1

1.4

130

204

—

—

—

—

—

—

—

—

—

—

—

1.1

Preliminary

Unit

V

V

A

A

V

m

m

S

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

(Ta = 25°C)

Test conditions

ID = 10 mA, VGS = 0

IG = 100 A, VDS = 0

VGS = 10 V, VDS = 0

VDS = 20 V, VGS = 0

VDS = 10 V, ID = 1 mA

ID = 1.2 A, VGS = 4.5 VNote3

ID = 1.2 A, VGS = 2.5 VNote3

ID = 1.2 A, VDS = 10 VNote3

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 1.2 A

VGS = 10 V

RL = 8.3 

Rg = 4.7 

VDD = 10 V

VGS = 5 V

ID = 2.3 A

IF = 2.3 A, VGS = 0 Note3

R07DS0482EJ0200 Rev.2.00

May 09, 2013

Page 2 of 6

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