HUF75229P3 查看數據表（PDF） - Fairchild Semiconductor
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HUF75229P3 Datasheet PDF : 9 Pages
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Data Sheet
HUF75229P3
December 2001
44A, 50V, 0.022 Ohm, N-Channel UltraFET
Power MOSFET
This N-Channel power MOSFET is
manufactured using the innovative
UltraFET® process. This advanced
process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUF75229P3
TO-220AB
75229P
NOTE: When ordering use the entire part number.
Features
• 44A, 50V
• Low On-Resistance, rDS(ON) = 0.022Ω
• Temperature Compensating PSPICE® Model
• Thermal Impedance SPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUF75229P3 Rev. B
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