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IDT74ALVC08 查看數據表(PDF) - Integrated Device Technology

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IDT74ALVC08
IDT
Integrated Device Technology 
IDT74ALVC08 Datasheet PDF : 5 Pages
1 2 3 4 5
IDT74ALVC08
3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE
INDUSTRIAL TEMPERATURE RANGE
OUTPUT DRIVE CHARACTERISTICS
Symbol
Parameter
Test Conditions(1)
VOH
Output HIGH Voltage
VCC = 2.3V to 3.6V
IOH = – 0.1mA
VCC = 2.3V
IOH = – 6mA
VCC = 2.3V
IOH = – 12mA
VCC = 2.7V
VCC = 3V
VCC = 3V
IOH = – 24mA
VOL
Output LOW Voltage
VCC = 2.3V to 3.6V
IOL = 0.1mA
VCC = 2.3V
IOL = 6mA
IOL = 12mA
VCC = 2.7V
IOL = 12mA
VCC = 3V
IOL = 24mA
Min.
Max.
Unit
VCC – 0.2
V
2
1.7
2.2
2.4
2
0.2
V
0.4
0.7
0.4
0.55
NOTE:
1. VIH and VIL must be within the min. or max. range shown in the DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE table for the appropriate VCC range.
TA = – 40°C to + 85°C.
OPERATING CHARACTERISTICS, TA = 25°C
Symbol
CPD
Parameter
Power Dissipation Capacitance per Gate
VCC = 2.5V ± 0.2V VCC = 3.3V ± 0.3V
Test Conditions
Typical
Typical
Unit
CL = 0pF, f = 10Mhz
25
26
pF
SWITCHING CHARACTERISTICS(1)
Symbol
tPLH
tPHL
Parameter
Propagation Delay
xA or xB to xY
NOTE:
1. See TEST CIRCUITS AND WAVEFORMS. TA = – 40°C to + 85°C.
VCC = 2.5V ± 0.2V
Min.
Max.
1
3.2
VCC = 2.7V
Min.
Max.
1.2
3.4
VCC = 3.3V ± 0.3V
Min. Max. Unit
1.2
3.3
ns
3

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