IMH21(2014) 查看數據表（PDF） - ROHM Semiconductor

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IMH21
(Rev.:2014)

NPN 600mA 20V Digital Transistors (Bias Resistor Built-in Transistors) For Muting

ROHM Semiconductor 

IMH21

Absolute maximum ratings (Ta = 25°C)

<For Tr1 and Tr2 in common>

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

Data Sheet

Symbol

VCBO

VCEO

VEBO

IC

ICP *1

PD *2

Tj

Tstg

Values

Unit

20

V

20

V

12

V

600

mA

1

A

300(Total) *3

mW

150

°C

55 to 150

°C

Electrical characteristics (Ta = 25°C)

<For Tr1 and Tr2 in common>

Parameter

Symbol

Conditions

Min.

Collector-base breakdown voltage BVCBO IC= 50A

20

Collector-emitter breakdown voltage BVCEO IC= 1mA

20

Emitter-base breakdown voltage

BVEBO IE= 50A

12

Collector cut-off current

ICBO VCB = 20V

-

Emitter cut-off current

IEBO

VEB = 12V

-

Collector-emitter saturation voltage VCE(sat) IC / IB= 50mA / 2.5mA

-

DC current gain

hFE VCE= 5V, IC= 50mA 820

Input resistance

R1

-

7

Transition frequency

fT *4

VCE = 10V, IE = 50mA

f = 100MHz

-

Output ON Resistance

Ron

VI = 5V

RL = 1k, f = 1kHz

-

*1 PW=10ms, Single pulse

*2 Each terminal mounted on a reference footprint

*3 200mW per element must not be exceeded.

*4 Characteristics of built-in transistor

Typ.

-

-

-

-

-

40

-

10

150

0.9

Max. Unit

-

V

-

V

-

V

0.5

A

0.5

A

150 mV

2700

-

13

k

-

MHz

-



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© 2014 ROHM Co., Ltd. All rights reserved.

2/5

2014.10 - Rev.C

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