IRF6618 查看數據表（PDF） - International Rectifier

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IRF6618

HEXFET Power MOSFET

International Rectifier 

IRF6618/IRF6618TR1

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)/∆TJ

Drain-to-Source Breakdown Voltage 30

Breakdown Voltage Temp. Coefficient –––

Static Drain-to-Source On-Resistance –––

–––

Gate Threshold Voltage

1.35

Gate Threshold Voltage Coefficient –––

–––

23

1.7

–––

1.64

-5.7

––– V VGS = 0V, ID = 250µA

–––

2.2

3.4

mV/°C Reference to 25°C, ID = 1mA

e mΩ VGS = 10V, ID = 30A

e VGS = 4.5V, ID = 24A

2.35 V VDS = VGS, ID = 250µA

––– mV/°C

––– ––– 5.0

VDS = 30V, VGS = 0V

IDSS

Drain-to-Source Leakage Current

––– ––– 1.0 µA VDS = 24V, VGS = 0V

––– ––– 150

VDS = 24V, VGS = 0V, TJ = 150°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -20V

gfs

Forward Transconductance

100 ––– ––– S VDS = 15V, ID = 24A

Qg

Total Gate Charge

––– 43 65

Qgs1

Qgs2

Qgd

Qgodr

Qsw

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Qgs2 + Qgd)

––– 12 –––

VDS = 15V

––– 4.0 ––– nC VGS = 4.5V

––– 15 23

ID = 24A

––– 12 –––

See Fig. 16

––– 19 –––

Qoss

Output Charge

RG

Gate Resistance

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

––– 28 ––– nC VDS = 15V, VGS = 0V

––– 1.0 2.2

––– 21 –––

Ãe Ω

VDD = 15V, VGS = 4.5V

––– 71 –––

ID = 24A

––– 27 ––– ns Clamped Inductive Load

tf

Fall Time

––– 8.1 –––

Ciss

Input Capacitance

––– 5640 –––

VGS = 0V

Coss

Output Capacitance

––– 1260 ––– pF VDS = 15V

Crss

Reverse Transfer Capacitance

––– 570 –––

ƒ = 1.0MHz

Diode Characteristics

Parameter

IS

Continuous Source Current

Min. Typ. Max. Units

Conditions

––– ––– 30

MOSFET symbol

D

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

––– ––– 240

––– 0.78 1.2

––– 43 65

––– 46 69

A showing the

integral reverse

G

S

e p-n junction diode.

V TJ = 25°C, IS = 24A, VGS = 0V

e ns TJ = 25°C, IF = 24A

nC di/dt = 100A/µs

2

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