IRF6633(2005) 查看數據表（PDF） - International Rectifier
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IRF6633 Datasheet PDF : 9 Pages
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IRF6633
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
20
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
VGS(th)
Gate Threshold Voltage
1.4
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
IDSS
Drain-to-Source Leakage Current
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
35
Qg
Total Gate Charge
Qgs1
Pre-Vth Gate-to-Source Charge
Qgs2
Post-Vth Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw
Switch Charge (Qgs2 + Qgd)
Qoss
Output Charge
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
IS
Continuous Source Current
–––
@TC=25°C (Body Diode)
ISM
Pulsed Source Current
–––
(Body Diode) d
VSD
Diode Forward Voltage
–––
trr
Reverse Recovery Time
–––
Qrr
Reverse Recovery Charge
–––
Typ.
–––
16
4.1
7.0
1.8
-5.2
–––
–––
–––
–––
–––
11
3.3
1.2
4.0
2.5
5.2
8.8
1.5
9.7
31
12
4.3
1250
630
200
Typ.
–––
–––
0.8
18
32
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
5.6 mΩ VGS = 10V, ID = 16A c
9.4
VGS = 4.5V, ID = 13A c
2.2
V VDS = VGS, ID = 250µA
––– mV/°C
1.0
150
100
-100
–––
µA VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 13A
17
–––
VDS = 10V
––– nC VGS = 4.5V
–––
ID = 13A
–––
See Fig. 15
–––
––– nC VDS = 10V, VGS = 0V
––– Ω
–––
VDD = 16V, VGS = 4.5V c
–––
ID = 13A
––– ns Clamped Inductive Load
–––
–––
VGS = 0V
––– pF VDS = 10V
–––
ƒ = 1.0MHz
Max. Units
Conditions
52
MOSFET symbol
A showing the
132
integral reverse
p-n junction diode.
1.0
V TJ = 25°C, IS = 13A, VGS = 0V c
27 ns TJ = 25°C, IF = 13A
48 nC di/dt = 500A/µs c
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by max. junction temperature.
2
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