IRF7307 查看數據表（PDF） - International Rectifier

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IRF7307

HEXFET Power MOSFET

International Rectifier 

100

VGS

TOP - 7.5V

- 5.0V

- 4.0V

- 3.5V

- 3.0V

- 2.5V

- 2.0V

B OTTOM - 1.5 V

10

P-Channel

100

VGS

TOP - 7.5V

- 5. 0V

- 4. 0V

- 3. 5V

- 3. 0V

- 2. 5V

- 2. 0V

BOTTOM - 1. 5V

10

IRF7307

1

-1.5 V

0.1

0.01

20µ s P ULS E W IDTH

TJ = 25 °C

A

0.1

1

10

100

-V DS , Dra in-to-S ourc e Vo ltage ( V)

Fig 12. Typical Output Characteristics

100

TJ = 2 5 °C

TJ = 1 5 0 °C

10

1

VDS = -15V

2 0µ s P UL S E W ID TH

0.1

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0A

-VG S , G a te -to -S ou rc e V olta ge (V )

Fig 14. Typical Transfer Characteristics

1500

1000

500

V GS = 0V,

f = 1MHz

C is s = C gs + C gd , Cd s S H O R T E D

C rss = C gd

C oss = Cd s + C gd

Ciss

Co ss

Crss

0

A

1

10

100

-VD S , Drain- to -So urc e V oltage ( V)

Fig 16. Typical Capacitance Vs.

Drain-to-Source Voltage

1

-1.5V

0.1

0.01

20µ s PUL SE W IDTH

TJ = 150°C

A

0.1

1

10

100

-VDS , D rain-to-S ourc e Voltage (V)

Fig 13. Typical Output Characteristics

2.0

ID = -3.6A

1.5

1.0

0.5

0.0

-60

VG S = -4 .5V

A

-40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Tem perature (°C )

Fig 15. Normalized On-Resistance

Vs. Temperature

10

ID = -2.2A

VD S = -16 V

8

6

4

2

FO R TE ST CIRCUIT

SE E FIG URE 2 2

0

A

0

5

10

15

20

25

Q G , Total G ate Charge ( nC)

Fig 17. Typical Gate Charge Vs.

Gate-to-Source Voltage

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