IRFH3702TRPBF(2009) 查看數據表（PDF） - International Rectifier

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IRFH3702TRPBF
(Rev.:2009)

HEXFET® Power MOSFET

International Rectifier 

IRFH3702PbF

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVDSS

∆ΒVDSS/∆TJ

RDS(on)

VGS(th)

∆VGS(th)

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Gate Threshold Voltage Coefficient

30

–––

–––

–––

1.35

–––

–––

0.02

5.7

8.7

1.8

-6.5

–––

–––

7.1

11.8

2.35

–––

V VGS = 0V, ID = 250µA

V/°C Reference to 25°C, ID = 1mA

ee mΩ

VGS = 10V, ID = 16A

VGS = 4.5V, ID = 12A

V

mV/°C VDS = VGS, ID = 25µA

IDSS

Drain-to-Source Leakage Current

––– ––– 1.0

µA VDS = 24V, VGS = 0V

––– ––– 150

VDS = 24V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -20V

gfs

Forward Transconductance

Qg

Total Gate Charge

37 ––– –––

––– 9.6 14

S VDS = 15V, ID = 12A

Qgs1

Qgs2

Qgd

Qgodr

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

––– 2.4 –––

VDS = 15V

––– 1.2 ––– nC VGS = 4.5V

––– 3.1 –––

ID = 12A

––– 2.9 –––

See Fig.17 & 18

Qsw

Switch Charge (Qgs2 + Qgd)

––– 4.3 –––

Qoss

Output Charge

––– 7.4 ––– nC VDS = 16V, VGS = 0V

RG

Gate Resistance

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

––– 2.2 ––– Ω

––– 9.6 –––

VDD = 15V, VGS = 4.5V

––– 15 ––– ns ID = 12A

––– 11 –––

RG=1.8Ω

––– 5.8 –––

See Fig.15

Ciss

Input Capacitance

––– 1510 –––

VGS = 0V

Coss

Output Capacitance

––– 306 ––– pF VDS = 15V

Crss

Reverse Transfer Capacitance

––– 120 –––

ƒ = 1.0MHz

Avalanche Characteristics

Parameter

EAS

d Single Pulse Avalanche Energy

IAR

™ Avalanche Current

Typ.

–––

–––

Max.

77

12

Units

mJ

A

Diode Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

––– ––– 3.5

––– ––– 120

––– ––– 1.0

––– 17 26

––– 15 23

MOSFET symbol

D

A showing the

integral reverse

G

e p-n junction diode.

S

V TJ = 25°C, IS = 12A, VGS = 0V

eà ns TJ = 25°C, IF = 12A, VDD = 15V

nC di/dt = 225A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

2

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