IRHN7250 查看數據表（PDF） - International Rectifier

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IRHN7250

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR

International Rectifier 

QG

10 V

QGS

QGD

VG

Charge

Figure 31a. – Basic Gate Charge Waveform

IRHN7250/IRHN8250 Devices

Pre-Radiation

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

+

D.U.T. -VDS

VGS

3mA

IG

ID

Current Sampling Resistors

Figure 31b. – Gate Charge Test Circuit

Figure 32 – Typical Time to Accumulated 1% Failure

F-359

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