IS24C02A 查看數據表（PDF） - Integrated Silicon Solution

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IS24C02A

1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM

Integrated Silicon Solution 

IS24C02A IS24C04A IS24C08A IS24C16A

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameter

Value

Unit

VS

Supply Voltage

–0.5 to +6.5

V

VP

Voltage on Any Pin

–0.5 to Vcc + 0.5 V

TBIAS

Temperature Under Bias

–55 to +125

°C

TSTG

Storage Temperature

–65 to +150

°C

IOUT

Output Current

5

mA

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections of

this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

OPERATING RANGE

(IS24C02A-2, IS24C04A -2, IS24C08A -2, & IS24C16A -2)

Range

Commercial

Industrial

Ambient Temperature

0°C to +70°C

–40°C to +85°C

VCC

1.8V to 5.5V

1.8V to 5.5V

OPERATING RANGE

(IS24C02A-3, IS24C04A -3, IS24C08A -3, & IS24C16A -3)

Range

Commercial

Industrial

Automotive

Ambient Temperature

0°C to +70°C

–40°C to +85°C

–40°C to +125°C

VCC

2.5V to 5.5V

2.5V to 5.5V

2.5V to 5.5V

CAPACITANCE(1,2)

Symbol

CIN

COUT

Parameter

Input Capacitance

Output Capacitance

Conditions

VIN = 0V

VOUT = 0V

Max.

Unit

6

pF

8

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.

ISSI ®

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

11

Rev. F

01/09/06

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