IS41C16100-60T(2001) 查看數據表（PDF） - Integrated Silicon Solution

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IS41C16100-60T
(Rev.:2001)

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Integrated Silicon Solution 

IS41C16100

IS41LV16100

EDO-PAGE-MODE READ CYCLE

ISSI ®

tRASP

tRP

RAS

tCRP

UCAS/LCAS

tCSH

tPC(1)

tRSH

tRCD

tCAS,

tCP

tCAS,

tCP

tCAS,

tCP

tCLCH

tCLCH

tCLCH

tASR

tAR

tRAD

tASC

tCAH tASC

tCAH tASC

tRAL

tCAH

ADDRESS

WE

I/O

Row

tRAH

Column

tRCS

Open

tAA

tRAC

tCAC

tCLZ

tOE

tOES

Column

Column

tRCH

Row

tRRH

tCAC

tCOH

tAA

tCPA

tCAC

tCLZ

tAA

tCPA

tOFF

Valid Data

Valid Data

tOEHC

tOD

Valid Data

tOE

tOES

Open

tOD

OE

tOEP

Undefined

Don’t Care

Note:

1. tPC can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both

measurements must meet the tPC specifications.

Integrated Silicon Solution, Inc. — 1-800-379-4774

13

Rev. G

08/29/01

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