IS61C25616AL-10KI 查看數據表（PDF） - Integrated Silicon Solution

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IS61C25616AL-10KI

256K x 16 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution 

IS61C25616AL IS61C25616AS

IS64C25616AL IS64C25616AS

DATA RETENTION SWITCHING CHARACTERISTICS (HIGH SPEED) (IS61/64C25616AL)

Symbol

VDR

IDR

Parameter

VDD for Data Retention

Data Retention Current

Test Condition

See Data Retention Waveform

VDD = 2.9V, CE ≥ VDD – 0.2V

VIN ≥ VDD – 0.2V, or VIN ≤ VSS + 0.2V

tSDR DataRetentionSetupTime SeeDataRetentionWaveform

tRDR RecoveryTime

See Data Retention Waveform

Note:

1. Typical Values are measured at VDD = 5V, TA = 25oC and not 100% tested.

Com.

Ind.

Auto.

typ. (1)

Min.

Max. Unit

2.9

5.5 V

—

—

—

1

8 mA

10

15

0

— ns

tRC

— ns

DATA RETENTION WAVEFORM (CE Controlled)

VDD

4.5V

tSDR

Data Retention Mode

tRDR

VDR

CE

GND

CE ≥ VDD - 0.2V

12

Integrated Silicon Solution, Inc. — www.issi.com

Rev. C

03/21/2008

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