IS61LV12816L 查看數據表（PDF） - Integrated Silicon Solution

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IS61LV12816L

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

Integrated Silicon Solution 

IS61LV12816L

ISSI ®

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

Symbol

ICC

Parameter

VDD Operating

Supply Current

Test Conditions

VDD = Max., CE = VIL

IOUT = 0 mA, f = Max.

Com.

Ind.

typ.(2)

-8 ns

-10 ns

Min. Max. Min. Max.

Unit

— 65

— 60

mA

— 70

— 65

— 50

— 50

ISB1 TTL Standby

VDD = Max.,

Current

VIN = VIH or VIL

(TTL Inputs)

CE ≥ VIH, f = max

Com.

Ind.

— 30

— 25

mA

— 35

— 30

ISB2 CMOS Standby VDD = Max.,

Current

CE ≥ VDD – 0.2V,

(CMOS Inputs) VIN ≥ VDD – 0.2V, or

VIN ≤ 0.2V, f = 0

Com.

Ind.

typ.(2)

—3

—3

mA

—4

—4

mA

— 700 — 700

µA

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

2. Typical values are measured at VDD=3.3V, TA=25oC. Not 100% tested.

CAPACITANCE(1)

Symbol Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

6

pF

COUT

Input/Output Capacitance

VOUT = 0V

8

pF

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

5

Rev. F

10/27/05

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