IS62WV12816ALL 查看數據表（PDF） - Integrated Silicon Solution

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IS62WV12816ALL

128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62WV12816ALL, IS62WV12816BLL

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol

VDR

IDR

tSDR

tRDR

Parameter

Test Condition

VDD for Data Retention

Data Retention Current

See Data Retention Waveform

VDD = 1.0V, CS1 ≥ VDD – 0.2V

Data Retention Setup Time See Data Retention Waveform

Recovery Time

See Data Retention Waveform

ISSI ®

Min. Max. Unit

1.0 3.6

V

— 10

µA

0—

ns

tRC —

ns

DATA RETENTION WAVEFORM (CS1 Controlled)

tSDR

Data Retention Mode

tRDR

VDD

VDR

CS1

GND

CS1 ≥ VDD - 0.2V

DATA RETENTION WAVEFORM (CS2 Controlled)

VDD

CS2

VDR

GND

Data Retention Mode

tSDR

tRDR

CS2 ≤ 0.2V

14

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. E

06/08/05

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