ISL9N306AP3 查看數據表（PDF） - Fairchild Semiconductor

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ISL9N306AP3

N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs

Fairchild Semiconductor 

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

30

VDS = 25V

-

VGS = 0V

TC = 150o

-

VGS = ±20V

-

On Characteristics

VGS(TH)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250µA

1

rDS(ON)

Drain to Source On Resistance

ID = 75A, VGS = 10V

ID = 61A, VGS = 4.5V

-

-

Dynamic Characteristics

CISS

COSS

CRSS

Qg(TOT)

Qg(5)

Qg(TH)

Qgs

Qgd

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge at 10V

Total Gate Charge at 5V

Threshold Gate Charge

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

-

VDS = 15V, VGS = 0V,

f = 1MHz

-

-

VGS = 0V to 10V

VGS = 0V to 5V VDD = 15V

-

VGS = 0V to 1V ID = 61A

-

Ig = 1.0mA

-

-

Switching Characteristics (VGS = 4.5V)

tON

Turn-On Time

-

td(ON)

tr

td(OFF)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

-

VDD = 15V, ID = 18A

-

VGS = 4.5V, RGS = 4.3Ω

-

tf

Fall Time

-

tOFF

Turn-Off Time

-

Switching Characteristics (VGS = 10V)

tON

Turn-On Time

-

td(ON)

Turn-On Delay Time

-

tr

td(OFF)

tf

Rise Time

Turn-Off Delay Time

Fall Time

VDD = 15V, ID = 18A

-

VGS = 10V, RGS = 4.3Ω

-

-

tOFF

Turn-Off Time

-

Unclamped Inductive Switching

tAV

Avalanche Time

ID = 3.6A, L = 3mH

240

Drain-Source Diode Characteristics

VSD

Source to Drain Diode Voltage

trr

Reverse Recovery Time

QRR

Reverse Recovered Charge

ISD = 61A

-

ISD = 25A

-

ISD = 61A, dISD/dt = 100A/µs

-

ISD = 61A, dISD/dt = 100A/µs

-

Typ Max Units

-

-

V

-

1

µA

-

250

-

±100 nA

-

3

V

0.0052 0.0060

Ω

0.0085 0.0095

3400

-

pF

650

-

pF

300

-

pF

60

90

nC

30

45

nC

3.0

4.5

nC

10

-

nC

11

-

nC

-

131

ns

16

-

ns

70

-

ns

34

-

ns

30

-

ns

-

97

ns

-

80

ns

10

-

ns

43

-

ns

62

-

ns

29

-

ns

-

137

ns

-

-

µs

-

1.25

V

-

1.0

V

-

35

ns

-

30

nC

©2002 Fairchild Semiconductor Corporation

Rev. B, February 2002

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