IXTT100N25P 查看數據表（PDF） - IXYS CORPORATION
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IXTT100N25P Datasheet PDF : 5 Pages
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Advanced Technical Information
PolarHTTM
Power MOSFET
IXTQ 100N25P
IXTK 100N25P
IXTT 100N25P
N-Channel Enhancement Mode
VDSS =
ID25 =
= RDS(on)
250 V
100 A
27 mΩ
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-3P
TO-264
TO-268
250
V
250
V
±20
V
100
A
75
A
250
A
60
A
60
mJ
2.0
J
10
V/ns
600
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
5.5
g
10
g
5
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
250
V
VGS(th)
VDS = VGS, ID = 250µA
2.5
5.0 V
IGSS
VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
27 mΩ
G
DS
G = Gate,
S = Source,
D = Drain,
TAB = Drain
TO-268 (IXTT)
(TAB)
GS
TO-264(SP) (IXTK)
D (TAB)
G DS
D (TAB)
G = Gate
S = Source
Features
D = Drain
TAB = Drain
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
© 2004 IXYS All rights reserved
DS99118B(07/04)
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