K4B1G0446G-BCH9 查看數據表（PDF） - Samsung

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K4B1G0446G-BCH9

1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant)

Samsung 

K4B1G0446G

K4B1G0846G

datasheet

Begin point : Rising edge of CK - CK

defined by the end point of ODTLon

CK

VTT

CK

tAON

DQ, DM

DQS , DQS

TDQS , TDQS

VSSQ

TSW2

TSW1

VSW1

VSW2

End point Extrapolated point at VSSQ

VSSQ

Figure 14. Definition of tAON

Begin point : Rising edge of CK - CK

with ODT being first registered high

CK

VTT

CK

tAONPD

DQ, DM

DQS , DQS

TDQS , TDQS

VSSQ

TSW2

TSW1

VSW1

VSW2

End point Extrapolated point at VSSQ

VSSQ

Figure 15. Definition of tAONPD

Begin point : Rising edge of CK - CK

defined by the end point of ODTLoff

CK

CK

VRTT_Nom

DQ, DM

DQS , DQS

TDQS , TDQS

VSW2

tAOF

End point Extrapolated point at VRTT_Nom

VSW1

TSW2

TSW1

VTT

VSSQ

TD_TAON_DEF

Figure 16. Definition of tAOF

- 25 -

Rev. 1.01

DDR3 SDRAM

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